JCS10N65T Datasheet, PDF (5/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET

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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS10N65T
On-Region Characteristics
V_GS
Top 15V
10V
9V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Notes:
1
1. 250μs pulse test
2. T_C=25℃
1
10
V_DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
V_GS=10V
0.85
0.80
0.75
0.70
V_GS=20V
0.65
Note :T_j=25 ℃
0.60
0
2
4
6
8
10
12
14
16
18
I_D [A]
Capacitance Characteristics
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.V_DS=40V
0.1
2
4
6
8
10
V_GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
150 ℃
1
25 ℃
Notes:
1. 250μs pulse test
2. V_GS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V_SD [V]
Gate Charge Characteristics
3x10³
2x10³
1x10³
0
10^-1
12
C_iss=C_gs+C_gd(C_ds=shorted)
C_oss=C_ds+C_gd
10
C_rss=C_gd
8
V_DS=480V
V_DS=300V
V_DS=120V
6
4
2
10⁰
10¹
V _DS Drain-Source Voltage [V]
0
0
10
20
30
40
Q_g Toltal Gate Charge [nC]
版本：201010C
5/10