BFG94_15 Datasheet, PDF (7/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
handbook,²h⁰alfpage
G _max
(dB)
15
MBB794
10
5
0
10
10²
10³ _{f (MHz)} 10⁴
I_c = 20 mA; V_CE = 8 V.
Fig.10 Maximum available stable gain as a
function of frequency.
30
handbook, halfpage
gain
(dB)
20
10
MBB795
G max
G _UM
0
0
10
20
30
V_CE = 8 V; f = 1 GHz.
G_max = maximum available stable gain.
G_UM = maximum unilateral power gain.
40
50
IC (mA)
Fig.11 Gain as a function of collector current.
handbook,²h⁰alfpage
d2
(dB)
40
MBB782
handbook,²h⁰alfpage
d3
(dB)
40
MBB781
60
60
80
10
30
50 _{I C (mA)} 70
I_c = 45 mA; V_CE = 10 V; f_(p+q) = 810 MHz.
See test circuit, Fig.2
Fig.12 Second order intermodulation distortion as
a function of collector current.
80
10
30
50 _{I C (mA)} 70
I_c = 45 mA; V_CE = 10 V; f_(p+q−r) = 793.25 MHz.
See test circuit, Fig.2
Fig.13 Third order intermodulation distortion as a
function of collector current.
September 1995
7