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BFG94_15 Datasheet, PDF (4/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor
Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note1)
F
minimum noise figure
VO
output voltage
d2
second order intermodulation
distortion
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
IE = 0; VCB = 10 V
IC = 30 mA; VCE = 5 V
IC = 45 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ie = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCE = 10 V; f = 1 MHz
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 °C
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 500 MHz
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 1 GHz
note 2
note 3
MIN. TYP. MAX. UNIT
− − 100 nA
45 90 −
− 100 −
− 0.9 2
pF
− 2.9 4.5 pF
− 0.5 0.8 pF
4−−
GHz
46−
GHz
11.5 13.5 −
dB
− 2.7 −
dB
−3−
dB
− 500 −
mV
− −51 −
dB
IC = 45 mA; VCE = 10 V; RL = 50 Ω; −
Tamb = 25 °C; measured at f = 1 GHz
note 4
−
21.5 −
34 −
dBm
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. dim = −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; Vr = VO −6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 Ω; Tamb = 25 °C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2p−q) and f(2q−p).
September 1995
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