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BFG94_15 Datasheet, PDF (4/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor | |||
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Philips Semiconductors
NPN 6 GHz wideband transistor
Product speciï¬cation
BFG94
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note1)
F
minimum noise ï¬gure
VO
output voltage
d2
second order intermodulation
distortion
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
IE = 0; VCB = 10 V
IC = 30 mA; VCE = 5 V
IC = 45 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ie = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCE = 10 V; f = 1 MHz
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 °C
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
Îs = Îopt; IC = 45 mA; VCE = 10 V;
f = 500 MHz
Îs = Îopt; IC = 45 mA; VCE = 10 V;
f = 1 GHz
note 2
note 3
MIN. TYP. MAX. UNIT
â â 100 nA
45 90 â
â 100 â
â 0.9 2
pF
â 2.9 4.5 pF
â 0.5 0.8 pF
4ââ
GHz
46â
GHz
11.5 13.5 â
dB
â 2.7 â
dB
â3â
dB
â 500 â
mV
â â51 â
dB
IC = 45 mA; VCE = 10 V; RL = 50 â¦; â
Tamb = 25 °C; measured at f = 1 GHz
note 4
â
21.5 â
34 â
dBm
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ï£ï£«----1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
2. dim = â60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 â¦; Tamb = 25 °C;
Vp = VO at dim = â60 dB; fp = 795.25 MHz;
Vq = VO â6 dB; Vr = VO â6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+qâr) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 â¦; Tamb = 25 °C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 â¦; Tamb = 25 °C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2pâq) and f(2qâp).
September 1995
4
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