BFG94_15 Datasheet, PDF (2/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
FEATURES
• High power gain
• Low noise figure
• Low intermodulation distortion
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
page
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
V_O
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
output voltage
P_L1
output power at 1 dB gain
compression
open emitter
open base
up to T_s = 140 °C (note 1)
I_C = 0; V_CE = 10 V; f = 1 MHz
I_C = 45 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 45 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 45 mA; V_CE = 10 V;
d_im = −60 dB; R_L = 75 Ω;
f = 800 MHz; T_amb = 25 °C
I_C = 45 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. TYP. MAX. UNIT
− − 15 V
− − 12 V
− − 60 mA
− − 700 mW
− − 0.8 pF
46−
GHz
11.5 13.5 −
dB
− 500 −
mV
− 21.5 −
dBm
September 1995
2