BFG94_15 Datasheet, PDF (6/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
handbook, h¹alfpage
C _re
(pF)
0.8
MBB791
0.6
0.4
0.2
0
0
4
I_C = i_c = 0; f = 1 MHz.
8
12
16
V _CE (V)
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
8
handbook, halfpage
fT
(GHz)
6
MCD089
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 10 V; f = 1 GHz.
Fig.7 Transition frequency as a function of
collector current.
handbook,⁶h⁰alfpage
G _UM
(dB)
40
MBB792
20
0
40
400
f (MHz)
4000
I_c = 45 mA; V_CE = 10 V.
Fig.8 Maximum unilateral power gain as a
function of frequency.
handbook,⁴h⁰alfpage
G _UM
(dB)
30
MBB793
20
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_c = 20 mA; V_CE = 8 V.
Fig.9 Maximum unilateral power gain as a
function of frequency.
September 1995
6