T0340VB45G Datasheet, PDF (6/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 13 – Typical reverse recovery current
250
T0340VB45G
Issue 2
T_j=125°C
I_C=340A
200
I_C=200A
Insulated Gate Bi-polar Transistor Type T0340VB45G
Figure 14 – Typical reverse recovery time
9
T0340VB45G
Issue 2
T_j=125°C
7
150
5
100
50
0
100
200
300
400
500
600
Commutation rate - di/dt (A/µs)
I_C=340A
3
I_C=200A
1
0
100
200
300
400
500
600
Commutation rate - di/dt (A/µs)
Figure 15 – Transient thermal impedance (IGBT)
1
T0340VB45G
Issue 2
E m itte r
Collector
0.1
Double Side
Figure 16 – Transient thermal impedance (Diode)
1
T0340VB45G
Issue 2
0.1
Anode
Cathode
Double Side
0.01
0.01
0.001
0.001
0.0001
0.0001
0.00001
0.00001
0.000001
0.00001 0.0001 0.001 0.01
0.1
1
10
100
Time (s)
0.000001
1E-06 1E-05 0.0001 0.001 0.01 0.1
1
Time (s)
10 100
Data Sheet T0340VB45G Issue 2
Page 6 of 7
August, 2012