T0340VB45G Datasheet, PDF (5/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 9 – Turn-off energy vs voltage
2
R_G(off)=20Ω
C_GE=47nF
V_GE=±15V
T_j=125°C
T0340VB45G
Issue 2
1.5
I_C=340A
I_C=270A
1
I_C=200A
Insulated Gate Bi-polar Transistor Type T0340VB45G
Figure 10 – Safe operating area
800
V_GE=±15V
Maximum L_S=200nH
T_j=125°C
T0340VB45G
Issue 2
600
400
0.5
200
I_C=100A
0
500
1000
1500
2000
2500
3000
Collector-emitter voltage - V_CE (V)
3500
0
0
1000
2000
3000
4000
5000
Gollector-emitter voltage - V_CE (V)
Figure 11 – Typical diode forward characteristics
1000
T0340VB45G
Issue 2
T_j=25°C
T_j=125°C
100
Figure 12 – Typical recovered charge
600
T0340VB45G
Issue 2
T_j=125°C
500
I_C=340A
I_C=200A
400
10
300
1
0
1
2
3
4
5
6
Instantaneous forward voltage - V_F (V)
200
0
100
200
300
400
500
600
Commutation rate - di/dt (A/µs)
Data Sheet T0340VB45G Issue 2
Page 5 of 7
August, 2012