T0340VB45G Datasheet, PDF (3/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
1000
T0340VB45G
Issue 2
V_GE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T0340VB45G
Figure 2 – Typical output characteristic
800
T0340VB45G
Issue 2
T_j =25°C
600
100
400
V_GE = 20V
V_GE = 17V
V_GE = 15V
10
V_GE = 13V
V_GE = 11V
200
1
0
1
2
3
4
5
6
7
Collector to emitter saturation voltage - V_CE(sat) (V)
Figure 3 – Typical output characteristic
800
T0340VB45G
Issue 2
T_j=125°C
600
0
0
1
2
3
4
5
Collector to emitter saturation voltage - V_CE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
20
V_CE=2800V
V_GE=±15V
C_GE=47nF
T_j=125°C
T0340VB45G
Issue 2
340A
15
200A
400
V_GE = 20V
10
V_GE = 17V
V_GE = 15V
V_GE = 13V
V_GE = 11V
200
5
0
0
1
2
3
4
5
6
7
Collector to emitter saturation voltage - V_CE(sat) (V)
0
10
20
30
40
50
60
70
80
90
Gate resistance - R_G(on) (Ω)
Data Sheet T0340VB45G Issue 2
Page 3 of 7
August, 2012