T0340VB45G Datasheet, PDF (4/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 5 – Typical turn-off delay time vs. gate
resistance
12
V_CE=2800V
V_GE=±15V
C_GE=47nF
T_j=125°C
10
T0340VB45G
Issue 2
340A
8
200A
6
Insulated Gate Bi-polar Transistor Type T0340VB45G
Figure 6 – Typical turn-on energy vs. collector current
4
R_G(on)=18Ω
C_GE=47nF
V_GE=±15V
T_j=125°C
T0340VB45G
Issue 2
3
V_CE=2800V
2
V_CE=2000V
4
1
V_CE=1000V
2
0
10
20
30
40
50
60
70
80
90
Gate resistance - R_G(off) (Ω)
0
50
100
150
200
250
300
350
400
Collector current - I_C (A)
Figure 7 – Typical turn-on energy vs. di/dt
10
V_CE=2800V
V_GE=±15V
T_j=125°C
T0340VB45G
Issue 2
8
6
4
I_C=340A
2
I_C=200A
Figure 8 – Typical turn-off energy vs. collector current
2.0
R_G(off)=20Ω
C_GE=47nF
V_GE=±15V
T_j=125°C
T0340VB45G
Issue 2
1.5
V_CE=2800V
V_CE=2000V
1.0
V_CE=1000V
0.5
0
0
100
200
300
400
500
600
Commutation rate - di/dt (A/µs)
0.0
50
100
150
200
250
300
350
400
Collector current - I_C (A)
Data Sheet T0340VB45G Issue 2
Page 4 of 7
August, 2012