GWM120-0075X1 Datasheet, PDF (5/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 120-0075X1
14
12
I_D = 125 A
T_J = 25°C
10
V_DS = 15 V
8
6
V_DS = 55 V
4
2
0
0 20 40 60 80 100 120 140
Q_G [nC]
Fig.7 Gate charge characteristic
0.5
V_DS = 30 V
0.4 ^{VGS = +10/0 V}
R_G = 39 Ω
0.3 ^{TJ = 125°C}
t_d(on)
t_r
200
160
120
0.2
80
0.1
E_on
0.0
0 20
E_rec(off) x10
40 60 80
I_D [A]
40
0
100 120 140
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
1.50
1.25
1.00
V_DS = 30 V
V_GS = +10/0 V
I_D = 125 A
T_J = 125°C
300
t_r
t_d(on)
250
200
0.75
150
0.50
0.25
0.00
0
E_on
E_rec(off) x10
20 40 60 80
R_G [Ω]
100
50
0
100 120
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160 180
T_J [°C]
Fig. 8 Drain current I_D vs. case temperature T_C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
E_off
0.0
0 20
V_DS = 30 V
V_GS = +10/0 V
R_G = 39 Ω
T_J = 125°C
40 60 80
I_D [A]
1000
900
800
700
600
t_d(off) ⁵⁰⁰
400
300
200
t_f
100
0
100 120 140
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.8
1.6
V_DS = 30 V
V_GS = +10/0 V
1.4 I_D = 125 A
1.2 ^{TJ = 125°C}
1.0
0.8
0.6
E_off
0.4
0.2
0.0
0
20 40
60 80
R_G [Ω]
1800
1600
1400
t_d(off)
1200
1000
800
600
400
t_f
200
0
100 120
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
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20110407d
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