GWM120-0075X1 Datasheet, PDF (2/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 120-0075X1
Source-Drain Diode
Symbol Conditions
V_SD
(diode) I_F = 80 A; V_GS = 0 V
t_rr
Q_RM
I_RM
I_F = 80 A; -di_F/dt = 800 A/µs
V_R = 30 V; T_J = 125°C
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
0.9 1.2 V
55
ns
0.9
µC
30
A
Component
Symbol Conditions
I_RMS
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
T_VJ
T_stg
V_ISOL
F_C
I_ISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Maximum Ratings
300 A
-55...+175 °C
-55...+125 °C
1000 V~
50 - 250 N
Symbol Conditions
R_{pin to chip}
C_P
Weight
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
Characteristic Values
min. typ. max.
0.6
mW
160
pF
25
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
2-6