GWM120-0075X1 Datasheet, PDF (4/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

1,2
I_DSS = 0.25 mA
1,1
1,0
0,9
0,8
0,7
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 1 Drain source breakdown voltage V_DSS
vs. junction temperature T_VJ
300
V_GS =
250
20 V
15 V
10 V
200
150
100
50
0
0
1
7V
T_J = 25°C
6.5 V
6V
2
3
4
V_DS [V]
5.5 V
5V
4.5 V
4V
5
6
Fig. 3 Typical output characteristic
2,0
12
V_GE = 10 V
I_D = 125 A
1,6
10
1,2 ^RDS(on) ^normalized
8 ^RDS(on)
6
0,8
4
0,4
2
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 5 Drain source on-state resistance R_DS(on)
versus junction temperature T_J
IXYS reserves the right to change limits, test conditions and dimensions.
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GWM 120-0075X1
250
V_DS = 30 V
200
150
100
50
TJ = 125°C
TJ = 25°C
0
01234567
V_GS [V]
Fig. 2 Typical transfer characteristic
300
250
200
150
100
50
0
0
V_GS =
TJ = 125°C
20 V 10 V 7 V
15 V
6.5 V
6V
5.5 V
5V
4.5 V
4V
1
2
3
4
5
6
V_DS [V]
Fig. 4 Typical output characteristic
4,0 _{4 V 4.5 V}
5V
3,5
3,0
2,5
5.5 V
6V
V_GS = 10 V
I_D = 125 A
6.5 V
TJ = 125°C
2,0
1,5
1,0
0,5
0
7V
10 V
15 V
20 V
50 100 150 200 250 300
I_D [A]
Fig. 6 Drain source on-state
resistance R_DS(on) versus I_D
20110407d
4-6