FII30-12E Datasheet, PDF (4/4 Pages) IXYS Corporation – NPT3 IGBT

20
mJ
16
E_on
12
8
V_CE = 600 V
V_GE = ±15 V
R_G = 68 Ω
T_VJ = 125°C
250
t_{d(on) ns}
200
t_r
t
150
100
4
50
0
E_on
0
10
0
20
30 A 40
I_C
Fig. 7 Typ. turn on energy and switching
times versus collector current
10
mJ
8
E_on
6
4
2
V_CE = 600 V
V_GE = ±15 V
I_C = 20 A
T_VJ = 125°C
0
0
50
100 150 200 Ω 250
R_G
Fig. 9 Typ. turn on energy vs gate resistor
80
A
I_CM ⁶⁰
40
20
R_G = 68 Ω
T_VJ = 125°C
0
0 200 400 600 800 1000 1200 V
V_CE
Fig. 11 Reverse biased safe operating area
RBSOA
FII 30-12E
4.0
400
m3.J5
t_{d(off) 3n5s0}
E_off ^3.0
2.5
2.0
1.5
V_CE = 600 V
V_GE = ±15 V
R_G = 68 Ω
T_VJ = 125°C
300
t
250
200
150
1.0
0.5
0.0
0
E_off
10
100
50
t_f
0
20
30 A 40
I_C
Fig. 8 Typ. turn off energy and switching
times versus collector current
2.5
mJ
E_off ^2.0
1.5
E_off
1.0
V_CE = 600 V
V_GE = ±15 V
I_C = 20 A
T_VJ = 125°C
t_d(off)
1250
ns
1000
t
750
500
0.5
250
0.0
0
t_f
0
50
100 150 200 Ω 250
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
Z_thJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
FII30-12E
1 s 10
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
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