FII30-12E Datasheet, PDF (2/4 Pages) IXYS Corporation – NPT3 IGBT

FII 30-12E
Diodes
Symbol
I_F25
I_F90
Conditions
T_C = 25°C
T_C = 90°C
Maximum Ratings
25
A
15
A
Equivalent Circuits for Simulation
Conduction
Symbol
V_F
I_RM
t_rr
R_thJC
R_thCH
Conditions
I_F = 20 A; T_VJ = 25°C
T_VJ = 125°C
I_F = 15 A; di_F/dt = -400 A/µs; T_VJ = 125°C
V_R = 600 V; V_GE = 0 V
(per diode)
with heat transfer paste
Characteristic Values
min. typ. max.
2.5 3.0 V
1.9
V
16
A
130
ns
2.3 K/W
3.6
K/W
IGBT (typ. at V_GE = 15 V; T_J = 125°C)
V₀ = 1.09 V; R₀ = 85 mΩ
Free Wheeling Diode (typ. at T_J = 125°C)
V₀ = 1.3 V; R₀ = 32 mΩ
Thermal Response
Component
Symbol
T
VJ
T_stg
V_ISOL
F_C
Conditions
I_ISOL ≤ 1 mA; 50/60 Hz
mounting force with clip
Maximum Ratings
-55...+150
°C
-55...+125
°C
2500
V~
20...120
N
Symbol
C
p
d_S,d_A
d_S,d_A
Weight
Conditions
coupling capacity between shorted pins
and mounting tab in the case
pin - pin
pin - backside metal
Characteristic Values
min. typ. max.
40
pF
1.7
mm
5.5
mm
9
g
IGBT (typ.)
C_th1 = 0.049 J/K; R_th1 = 0.15 K/W
C_th2 = 0.133 J/K; R_th2 = 0.65 K/W
Free Wheeling Diode (typ.)
C_th1 = 0.021 J/K; R_th1 = 0.63 K/W
C_th2 = 0.052 J/K; R_th2 = 1.67 K/W
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
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