FII30-12E Datasheet, PDF (3/4 Pages) IXYS Corporation – NPT3 IGBT

FII 30-12E
80
A
I_C 60
40
T_VJ = 25°C
20
V_GE = 17 V
15 V
13 V
11 V
9V
0
0
1
2
3
4
5 V6
V_CE
Fig. 1 Typ. output characteristics
60
A
50
I_C
40
T_VJ = 125°C
V_GE = 17 V _{15 V}
13 V
30
11 V
20
9V
10
0
0
1
2
3
4
5 V6
V_CE
Fig. 2 Typ. output characteristics
80
V_CE = 20 V
A
60
I_C
40
T_VJ = 25°C
20
T_VJ = 125°C
0
0
5
10
15 V 20
V_GE
Fig. 3 Typ. transfer characteristics
15
V
12
V_GE
9
V_CE = 600 V
I_C = 20 A
6
3
0
0
20
40
60
80 nC 100
Q_G
Fig. 5 Typ. turn on gate charge
50
I_F ^4A0
30
20
T_VJ = 125°C
T_VJ = 25°C
10
0
0
1
2
3V 4
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
40
A
30
I_RM
20
200
ns
150
t_rr
t_rr
100
10
I_RM
0
0
200
T_VJ = 125°C
V_R = 600 V
50
I_F = 15 A
400
600
FII30-12E
0
8A00/µs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
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