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FII30-12E Datasheet, PDF (1/4 Pages) IXYS Corporation – NPT3 IGBT
FII 30-12E
NPT3 IGBT
Phaseleg Topology
in ISOPLUS i4-PACTM
IC25
= 33 A
VCES = 1200 V
VCE(sat) typ = 2.4 V
3
5
4
1
1
5
2
IGBTs
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
tSC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
RthJH
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
± 20
V
TC = 25°C
TC = 90°C
33
A
20
A
VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
40
A
VCES
VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C
10
µs
non-repetitive
TC = 25°C
150
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 20 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 20 A
VGE = ±15 V; RG = 68 Ω
2.4 2.9 V
2.8
V
4.5
6.5 V
0.2 mA
0.2
mA
200 nA
205
ns
105
ns
320
ns
175
ns
4.1
mJ
1.5
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 20 A
with heat transfer paste
1.2
nF
100
nC
0.8 K/W
1.2
K/W
Features
• NPT3 IGBT
- positive temperature coefficient of
saturation voltage for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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