IS61LV256AL Datasheet, PDF (9/13 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS61LV256AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR VDDforDataRetention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE ≥ VDD – 0.2V
VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V
tSDR DataRetentionSetupTime SeeDataRetentionWaveform
tRDR RecoveryTime
See Data Retention Waveform
Note:
1. Typical Values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
Com.
Ind.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
t_SDR
Data Retention Mode
V_DR
CE
GND
CE ≥ VDD - 0.2V
ISSI ^®
Min. Typ.⁽¹⁾
2.0
—
2
——
0
tRC
Max. Unit
3.6 V
40 µA
50
— ns
— ns
t_RDR
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. A
03/17/06