IS61LV256AL Datasheet, PDF (4/13 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS61LV256AL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Sym. Parameter
Test Conditions
-10 ns
Min. Max.
Unit
ICC1 VDDOperating
VDD = Max., CE = VIL
Com.
— 20
mA
Supply Current
IOUT = 0 mA, f = 1 MHz
Ind.
— 25
ICC2 VDDDynamicOperating
VDD = Max., CE = VIL
Com.
— 30
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
— 35
typ.⁽²⁾
20
ISB1 TTLStandbyCurrent
VDD = Max.,
Com.
—1
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
—1
CE ≥ VIH, f = 0
ISB2 CMOSStandby
VDD = Max.,
Com.
— 40
µA
Current (CMOS Inputs)
CE ≤ VDD – 0.2V,
Ind.
— 50
VIN ≥ VDD – 0.2V, or
typ.⁽²⁾
2
VIN ≤ 0.2V, f = 0
Notes:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06