IS43LD16640A Datasheet, PDF (86/143 Pages) Integrated Silicon Solution, Inc – Four-bit Pre-fetch DDR Architecture

IS43/46LD16640A
IS43/46LD32320A
Electrical Specifications
Absolute Maximum DC Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
Parameter
VDD1 supply voltage relative to VSS
Symbol Min Max Units Notes
VDD1 -0.4 2.3 V
2
VDD2 supply voltage relative to VSS
VDD2 -0.4 1.6 V
2
VDDCA supply voltage relative to VSSCA VDDCA -0.4 1.6 V 2,4
VDDQ supply voltage relative to VSSQ
VDDQ -0.4 1.6 V 2,3
Voltage on any ball relative to VSS
Storage Temperature
VIN, VOUT -0.4 1.6 V
T_STG -55 125 _°C 5
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability
2. See “Power-Ramp” section in “Power-up, Initialization, and Power-Off” for relationships between power supplies.
3. VREFDQ 0.6 x VDDQ; however, VREFDQ may be VDDQ provided that VREFDQ 300mV.
4. VREFCA 0.6 x VDDCA; however, VREFCA may be VDDCA provided that VREFCA 300mV.
5. Storage Temperature is the case surface temperature on the center/top side of the LPDDR2 device. For the measurement
conditions, please refer to JESD51-2 standard.
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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
8/6/2014