IS62WV102416ALL Datasheet, PDF (8/17 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
ICC
ICC1
ISB1
ISB2
Parameter
VDD Dynamic Operating
Supply Current
Test Conditions
VDD = Max.,
IOUT = 0 mA, f = fMAX
VIN = 0.4V or VDD –0.3V
Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
IOUT = 0 mA, f = 0
VIN = 0.4V or VDD –0.3V
VDD = Max.,
VIN = VIH or VIL
CS1 ≥ VIH, f = 0
VDD = Max.,
CS1 ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.⁽²⁾
-25
Min. Max.
— 30
— 35
— 60
25
— 20
— 30
— 50
— 15
— 20
— 40
— 0.8
— 1.2
—2
0.1
-35
Min. Max. Unit
— 25 mA
— 30
— 60
— 20 mA
— 30
— 50
— 15 mA
— 20
— 40
— 0.8 mA
— 1.2
—2
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
01/18/08