IS62WV102416ALL Datasheet, PDF (14/17 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.2V, CS1 ≥ VDD – 0.2V
Com.
Ind.
Auto.
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Note:
1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
VDD
1.65V
1.4V
VDR
CS1
GND
tSDR
Data Retention Mode
CS1 ≥ VDD - 0.2V
Min. Typ.⁽¹⁾ Max. Unit
1.2
3.6 V
—
0.1 0.8 mA
—
0.1 1.2
—
0.1
2
0
— ns
tRC
— ns
tRDR
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode
V_DD
3.0
CE2
2.2V
V_DR
0.4V
GND
t_SDR
CS2 ≤ 0.2V
t_RDR
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
01/18/08