IS62C1024AL Datasheet, PDF (8/11 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW POWER CMOS STATIC RAM

IS62C1024AL
IS65C1024AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR VDDforDataRetention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE1 ≥ VDD – 0.2V
or CE2 ≤ 0.2V
VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V
tSDR DataRetentionSetupTime SeeDataRetentionWaveform
tRDR RecoveryTime
See Data Retention Waveform
Note:
1. Typical Values are measured at VDD = 5V, TA = 25^oC and not 100% tested.
Com.
Ind.
Auto.
DATA RETENTION WAVEFORM (CE1 Controlled)
VDD
4.5V
t_SDR
Data Retention Mode
2.2V
V_DR
CE1
GND
CE1 ≥ VDD - 0.2V
DATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention Mode
VDD
4.5V
CE2
2.2V
V_DR
0.4V
GND
t_SDR
CE2 ≤ 0.2V
ISSI ^®
Min. Typ.
2.0
——
——
——
0
tRC
Max. Unit
5.5 V
5 µA
10
15
— ns
— ns
t_RDR
t_RDR
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
01/24/05