IS62C1024AL Datasheet, PDF (3/11 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW POWER CMOS STATIC RAM

IS62C1024AL
IS65C1024AL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VTERM
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
Unit
–0.5 to +7.0
V
–65 to +125
°C
1.0
W
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
Unit
pF
pF
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
ILO
Output Leakage
Test Conditions
Options Min.
Max.
Unit
VDD = Min., IOH = –1.0 mA
2.4
—
V
VDD = Min., IOL = 2.1 mA
—
0.4
V
2.2 VDD + 0.5
V
-0.5
0.8
V
GND ≤ VIN ≤ VDD
Com.
-1
1
µA
Ind.
-2
2
Auto.
-5
5
GND ≤ VOUT ≤ VDD
Com.
-1
CE1 = VIH, or
Ind.
-2
CE2 = VIL, or OE = VIH or
Auto.
-5
WE = VIL
1
µA
2
5
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. C
01/24/05