IS61WV20488ALL_10 Datasheet, PDF (8/19 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED CMOS STATIC RAM

IS61WV20488ALL, IS61/64WV20488BLL
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)

-8
-10
Symbol Parameter Min. Max.
Min. Max. Unit
trc
Read Cycle Time
8—
10 —
ns
taa
Address Access Time
—8
— 10
ns
toha
Output Hold Time
2—
2—
ns
tace
CE Access Time
—8
— 10
ns
tdoe
OE Access Time
— 5.5
— 6.5
ns
thzoe⁽²⁾ OE to High-Z Output
—3
—4
ns
tlzoe⁽²⁾
OE to Low-Z Output
0—
0—
ns
thzce⁽²
CE to High-Z Output
03
04
ns
tlzce⁽²⁾
CE to Low-Z Output
3—
3—
ns
tpu
Power Up Time
0—
0—
ns
tpd
Power Down Time
—8
— 10
ns
Notes:
1.  Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2.  Tested with the load in Figure 2.Transition is measured ±500 mV from steady-state voltage.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  B
08/04/2010