IS61WV20488ALL_10 Datasheet, PDF (7/19 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED CMOS STATIC RAM

IS61WV20488ALL, IS61/64WV20488BLL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-8
Symbol Parameter
Test Conditions Min. Max.
Icc
Vdd Dynamic Operating Vdd = Max.,

Supply Current
Iout = 0 mA, f = fmax


Com. — 120
Ind. — 125
Auto. — —
typ.⁽²⁾
Icc1

Operating
Supply Current
Vdd = Max.,
Iout = 0 mA, f = 0
Com. — 35
Ind. — 35
Auto. — —
Isb1
TTL Standby Current
(TTL Inputs)

Vdd = Max.,
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com. — 30
Ind. — 35
Auto. — —
Isb2
CMOS Standby
Current (CMOS Inputs)


Vdd = Max.,
CE ≥ Vdd – 0.2V,
Vin ≥ Vdd – 0.2V, or
Vin ≤ 0.2V, f = 0
Com. — 20
Ind. — 25
Auto. — —
typ.⁽²⁾
-10
Min. Max.
— 95
— 100
— 140
60
— 30
— 40
— 60
— 30
— 35
— 70
— 20
— 25
— 70
4
-20
Min. Max. Unit
— 90 mA
— 100
— 140
— 30 mA
— 40
— 70
— 30 mA
— 35
— 70
— 15 mA
— 20
— 70
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev.  B
08/04/2010