IS61WV20488ALL_10 Datasheet, PDF (16/19 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED CMOS STATIC RAM

IS61WV20488ALL, IS61/64WV20488BLL
DATA RETENTION SWITCHING CHARACTERISTICS 
Symbol Parameter
Test Condition
Min.
Vdr
Vdd for Data Retention
See Data Retention Waveform
1.2
Idr
Data Retention Current
Vdd = 1.2V, CE ≥ Vdd – 0.2V


Ind.
—
Auto.
—
typ.⁽¹⁾
tsdr
Data Retention Setup Time See Data Retention Waveform
0
trdr
Recovery Time
See Data Retention Waveform
trc
Note:
1. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Max. Unit
3.6 V
25 mA
60
3
— ns
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  B
08/04/2010