IS64LV51216 Datasheet, PDF (7/15 Pages) Integrated Silicon Solution, Inc – 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV51216
IS64LV51216
ISSI ^®
READ CYCLE NO. 2^(1,3)
1
tRC
ADDRESS
tAA
2
tOHA
OE
tDOE
CE
tLZOE
tHZOE
3
tLZCE
tACE
tHZCE
4
LB, UB
tBA
tLZB
tRC
tHZB
5
DOUT ^HIGH-Z
DATA VALID
VDD
Supply
Current
tPU
50%
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
ICC
tPD
50%
6
ISB
UB_CEDR2.eps
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. D
12/06/05