IS64LV51216 Datasheet, PDF (3/15 Pages) Integrated Silicon Solution, Inc – 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV51216
IS64LV51216
ISSI ^®
PIN CONFIGURATIONS
48-Pin mini BGA (9mmx11mm)
1 23 45 6
A
LB
OE
A0
A1
A2
N/C
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9 I/O10 A5
A6
I/O1 I/O2
D
GND I/O₁₁ A17
A7
I/O3 VDD
E
VDD I/O12 GND A16 I/O4 GND
F
I/O14 I/O₁₃ A14
A15
I/O5
I/O6
G
I/O15 NC
A12 A13
WE
I/O7
H
A18
A8
A9
A10 A11 NC
PIN DESCRIPTIONS
1
A0-A18
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
2
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
3
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
VDD
Power
4
GND
Ground
5
6
7
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
8
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD+0.5
V
9
VDD
VDD Related to GND
–0.3 to +4.0
V
TSTG Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
10
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. D
12/06/05