IS61WV6416BLL Datasheet, PDF (7/16 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV6416BLL
IS61WV6416BLL
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
-12 ns
Min. Max.
-15 ns
Min. Max.
Unit
tRC
Read Cycle Time
12 —
15 —
ns
tAA
Address Access Time
— 12
— 15
ns
tOHA
Output Hold Time
3—
3—
ns
tACE
CE Access Time
— 12
— 15
ns
tDOE
OE Access Time
—6
—7
ns
tHZOE⁽²⁾
OE to High-Z Output
—6
06
ns
tLZOE⁽²⁾
OE to Low-Z Output
0—
0—
ns
tHZCE⁽²
CE to High-Z Output
06
06
ns
tLZCE⁽²⁾
CE to Low-Z Output
3—
3—
ns
tBA
LB, UB Access Time
—6
—7
ns
tHZB
LB, UB to High-Z Output
06
06
ns
tLZB
LB, UB to Low-Z Output
0—
0—
ns
Notes:
1. Test conditions assume signal transition times of 1.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0V to
VDD V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. B
11/08/05