IS61WV6416BLL Datasheet, PDF (13/16 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV6416BLL
IS61WV6416BLL
ISSI ^®
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Operations Min. Typ.⁽¹⁾ Max.
Unit
VDR
VDD for Data Retention
See Data Retention Waveform
1.8
—
3.6
V
IDR
Data Retention Current
VDD = 1.8V, _CE ≥ VDD – 0.2V
COM.
—
6
20
µA
IND.
—
6
50
AUTO
—
6
75
tSDR
Data Retention Setup Time See Data Retention Waveform
0
—
—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
—
—
ns
Note:
1. Typical values are measured at VDD = 2.5V, TA = 25^OC. Not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
13
Rev. B
11/08/05