IS61WV6416BLL Datasheet, PDF (5/16 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV6416BLL
IS61WV6416BLL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-12 ns
-15 ns
Options
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating VDD = Max.,
COM.
— 35
— 30
mA
Supply Current
IOUT = 0 mA, f = fMAX
IND.
— 45
— 40
AUTO
— 60
— 50
typ.⁽²⁾
— 20
— 20
ICC1
Operating Supply
Current
VDD = Max.,
Iout = 0mA, f = 0
COM.
—5
—5
mA
IND.
—5
—5
AUTO
—5
—5
ISB2
CMOS Standby
VDD = Max.,
COM.
— 20
— 20
uA
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
IND.
— 50
— 50
VIN ≥ VDD – 0.2V, or
AUTO
— 75
— 75
VIN ≤ 0.2V, f = 0
typ.⁽²⁾
—6
—6
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=2.5V, TA=25^oC. Not 100% tested.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. B
11/08/05