IS61WV6416BLL Datasheet, PDF (3/16 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM

IS64WV6416BLL
IS61WV6416BLL
ISSI ^®
TRUTH TABLE
Mode
WE
CE
OE
LB
UB
Not Selected
X
H
X
X
X
Output Disabled
H
L
H
X
X
X
L
X
H
H
Read
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
Write
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD+0.5
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.5
W
VDD
VDD Related to GND
-0.2 to +3.9
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
VDD (15 ns)
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
VDD (12 ns)
3.3V + 10%
3.3V + 10%
3.3V + 10%
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. B
11/08/05