IS61SP6464 Datasheet, PDF (7/20 Pages) Integrated Silicon Solution, Inc – 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM

IS61SP6464
DC ELECTRICAL CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA
IOL = 8 mA
GND - VIN - VCCQ⁽²⁾
GND - VOUT - VCCQ, OE = VIH
Com.
Ind.
Com.
Ind.
ISSI ^®
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.0 VCCQ + 0.3 V
–0.3
0.8
V
–2
2
µA
–10
10
–2
2
µA
–10
10
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
5
pF
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
ZO = 50Ω
Output
Buffer
30 pF
Figure 1
50Ω
1.5V
3.3V
317 Ω
OUTPUT
5 pF
Including
jig and
scope
Figure 2
351 Ω
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. A
04/17/01