IS61LV2568L_08 Datasheet, PDF (6/14 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568L
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
tRC Read Cycle Time
tAA Address Access Time
tOHA Output Hold Time
tACE CE Access Time
tDOE OE Access Time
tLZOE⁽²⁾ OE to Low-Z Output
tHZOE⁽²⁾ OE to High-Z Output
tLZCE⁽²⁾ CE to Low-Z Output
tHZCE⁽²⁾ CE to High-Z Output
- 8 ns
-10 ns
Min. Max
Min. Max.
Unit
8—
10 —
ns
—8
— 10
ns
2.5 —
2.5 —
ns
—8
— 10
ns
— 3.5
—4
ns
0—
0—
ns
0 3.5
0
4
ns
3.5 —
3—
ns
0 3.5
0
4
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
04/28/08