IS61LV2568L_08 Datasheet, PDF (3/14 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568L
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE CE OE
X
H
X
H
L
H
H
L
L
L
L
X
I/O Operation
High-Z
High-Z
DOUT
DIN
VDD Current
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VDD
VTERM
TSTG
PD
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
Unit
–0.5 to +4.0
V
–0.5 to VDD + 0.5
V
–65 to +150
°C
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VDD (8ns)
3.3V +10%,-5%
VDD (10 ns)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage⁽¹⁾
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
ILO
Output Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).
VIH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns).
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.0 VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–1
1
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. D
04/28/08