IS61LV10248 Datasheet, PDF (6/16 Pages) Integrated Silicon Solution, Inc – 1M x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV10248
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
tRC
tAA
tOHA
tACE
tDOE
tHZOE⁽²⁾
tLZOE⁽²⁾
tHZCE⁽²
tLZCE⁽²⁾
tPU
tPD
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
Power Up Time
Power Down Time
-8
-10
Min. Max.
Min. Max.
Unit
8—
10 —
ns
—8
— 10
ns
3—
3—
ns
—8
— 10
ns
— 3.5
—4
ns
—3
—4
ns
0—
0—
ns
—3
04
ns
3—
3—
ns
0—
0—
ns
—8
— 10
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
04/13/06