IS61LV10248 Datasheet, PDF (3/16 Pages) Integrated Silicon Solution, Inc – 1M x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV10248
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down)
Output Disabled H
Read
H
Write
L
CE OE
HX
LH
LL
LX
I/O Operation VDD Current
High-Z
ISB1, ISB2
High-Z
ICC
DOUT
ICC
DIN
ICC
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD
VDD Relates to GND
–0.3 to 4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VDD
3.3V +10%, -5%
3.3V +10%, -5%
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
CI/O
Input/Output Capacitance
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. C
04/13/06