IS61LV10248 Datasheet, PDF (4/16 Pages) Integrated Silicon Solution, Inc – 1M x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV10248
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL=–3.0Vforpulsewidthlessthan10ns.
Com.
Ind.
Com.
Ind.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.2 VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–5
5
–1
1
µA
–5
5
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
ICC
VDD Dynamic Operating
Supply Current
ISB1
TTL Standby Current
(TTL Inputs)
ISB2
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VDD = Max.,
IOUT = 0 mA, f = fMAX
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8
Min. Max.
— 110
— 120
— 30
— 35
— 20
— 25
-10
Min. Max.
Unit
— 100
mA
— 110
— 30
mA
— 35
— 20
mA
— 25
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
04/13/06