IS62WV1288ALL Datasheet, PDF (5/15 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV1288ALL, IS62WV1288BLL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
62WV1288ALL (1.65V - 2.2V)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
Operating Supply
Current
ISB1
TTL Standby Current
(TTL Inputs)
VDD = Max.,
IOUT = 0 mA, f = 0
VDD = Max.,
VIN = VIH or VIL
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
Com.
Ind.
typ.⁽²⁾
Com.
Ind.
Com.
Ind.
Max.
Unit
70 ns
8
mA
8
5
5
mA
5
0.8
mA
0.8
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1≥ VDD–0.2V,
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.⁽²⁾
10
µA
10
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=1.8V, TA=25^oC. Not 100% tested.
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
62WV1288BLL (2.5V - 3.6V)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
typ.⁽²⁾
ICC1
Operating Supply
VDD = Max.,
Com.
Current
IOUT = 0 mA, f = 0
Ind.
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
Max.
Max.
Unit
45ns
55 ns
17
15
mA
17
15
12
10
5
5
mA
5
5
0.8
0.8
mA
0.8
0.8
ISB2
CMOS Standby
VDD = Max.,
Com.
10
10
µA
Current(CMOSInputs) CS1≥VDD–0.2V,
Ind.
10
10
CS2 ≤ 0.2V,
typ.⁽²⁾
5
5
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD=3.0V, TA=25^oC. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. C
06/20/05