IS62WV1288ALL Datasheet, PDF (3/15 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV1288ALL, IS62WV1288BLL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.2 to VDD+0.3
V
VDD
VDD Related to GND
–0.2 to +3.8
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (VDD)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV1288ALL
1.65V - 2.2V
1.65V - 2.2V
IS62WV1288BLL
2.5V - 3.6V
2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
IOH = -1 mA
1.65-2.2V
2.5-3.6V
VOL
Output LOW Voltage
IOL = 0.1 mA
IOL = 2.1 mA
1.65-2.2V
2.5-3.6V
VIH(2)
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
VIL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. Undershoot: –1.0V for pulse width less than 10 ns. Not 100% tested.
2. Overshoot: VDD + 1.0V for pulse width less than 10 ns. Not 100% tested.
Min.
Max.
Unit
1.4
—
V
2.2
—
V
—
0.2
V
—
0.4
V
1.4
VDD + 0.2
V
2.2
VDD + 0.3
V
–0.2
0.4
V
–0.2
0.6
V
–1
1
µA
–1
1
µA
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE CS1 CS2 OE
X
H
X
X
X
X
L
X
H
L
H
H
H
L
H
L
L
L
H
X
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
VDD Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. C
06/20/05