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| IS62WV10248EALL Datasheet, PDF (4/15 Pages) Integrated Silicon Solution, Inc – Data control for upper and lower bytes | |||
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IS62WV10248EALL/BLL
IS65WV10248EALL/BLL
ABSOLUTE MAXIMUM RATINGS AND OPERATING RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
â0.2 to +3.9(VDD+0.3V)
V
tBIAS
Temperature Under Bias
â55 to +125
ï°C
VDD
VDD Related to GND
tStg
Storage Temperature
â0.2 to +3.9(VDD+0.3V)
V
â65 to +150
ï°C
IOUT
DC Output Current (LOW)
20
mA
Notes:
Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE(1)
Range
Device Marking
Ambient Temperature VDD(min) VDD(typ)
Commercial
IS62WV10248EALL 0ï°C to +70ï°C
1.65V
1.8V
Industrial
IS62WV10248EALL -40ï°C to +85ï°C
1.65V
1.8V
Automotive
IS65WV10248EALL -40ï°C to +125ï°C
1.65V
1.8V
Commercial
IS62WV10248EBLL 0ï°C to +70ï°C
2.2V
3.3V
Industrial
IS62WV10248EBLL -40ï°C to +85ï°C
2.2V
3.3V
Automotive
IS65WV10248EBLL -40ï°C to +125ï°C
2.2V
3.3V
Note:
1. Full device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization.
VDD(max)
2.2V
2.2V
2.2V
3.6V
3.6V
3.6V
PIN CAPACITANCE (1)
Parameter
Symbol Test Condition
Input capacitance
DQ capacitance (IO0âIO7)
CIN
CI/O
TA = 25°C, f = 1 MHz, VDD = VDD(typ)
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
Max
10
10
Units
pF
pF
THERMAL CHARACTERISTICS (1)
Parameter
Thermal resistance from junction to ambient (airflow = 1m/s)
Thermal resistance from junction to case
Note:
1. These parameters are guaranteed by design and tested by a sample basis only.
Symbol
RθJA
RθJC
Rating
43.22
13.35
Units
°C/W
°C/W
Integrated Silicon Solution, Inc.- www.issi.com
4
Rev. B
10/21/2014
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