IS62LV256AL Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS65LV256AL
IS62LV256AL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-20 ns
-45 ns
Min. Max. Min. Max.
Unit
ICC1 VDD Operating
Supply Current
VDD = Max., CE = VIL
Com.
—4
—4
mA
IOUT = 0 mA, f = 1 MHz
Ind.
—5
—5
Auto.
——
—8
ICC2 VDD Dynamic Operating VDD = Max., CE = VIL
Com.
— 20
— 10
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
— 25
— 12
Auto.
——
— 20
typ.⁽²⁾
15
7
ISB1 TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
— 1.5 — 1.5
mA
Ind.
— 1.8 — 1.8
Auto.
——
—2
ISB2 CMOS Standby
VDD = Max.,
Com.
— 15
— 15
µA
Current (CMOS Inputs) CE ≤ VDD – 0.2V,
Ind.
— 20
— 20
VIN > VDD – 0.2V, or
Auto.
——
— 50
VIN ≤ 0.2V, f = 0
typ.⁽²⁾
2
2
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
03/17/06