IS61LV12824 Datasheet, PDF (4/13 Pages) Integrated Silicon Solution, Inc – 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV12824
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
ISSI ^®
WE CE1 CE2 CE2 OE
X
H
X
X
X
X
X
L
X
X
X
X
X
H
X
H
L
H
L
H
H
L
H
L
L
L
L
H
L
X
I/O0-I/O23
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VCC
Power Supply Voltage Relative to GND
–0.5 to 5.0
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc + 0.5
V
TSTG
Storage Temperature
–65 to + 150
°C
TBIAS
Temperature Under Bias:
Com.
Ind.
–10 to + 85
°C
–45 to + 90
°C
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
±20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC (8 ns)
3.3V + 10%, – 5%
3.3V + 10%, – 5%
VCC (10 ns)
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width ≤ 2.0 ns).
VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width ≤ 2.0 ns).
Min.
2.4
—
2.2
–0.3
–1
–1
Max.
—
0.4
VCC + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05