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IS61WV25632ALL Datasheet, PDF (3/19 Pages) Integrated Silicon Solution, Inc – TTL compatible inputs and outputs
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IS61WV25632ALL/ALS
IS61WV25632BLL/BLS
IS64WV25632BLL/BLS
TRUTH TABLE
CE CE2 OE WE BWa BWb BWc BWd DQ0-7 DQ8-15 DQ16-23 DQ24-31
H X X X X X X X High-Z High-Z High-Z High-Z
X L X X X X X X High-Z High-Z High-Z High-Z
L H L H L L L L Data Out Data Out Data Out Data Out
L H L H L H H H Data Out High-Z High-Z High-Z
L H L H H L H H High-Z Data Out High-Z High-Z
L H L H H H L H High-Z High-Z Data Out High-Z
L H L H H H H L High-Z High-Z High-Z Data Out
L H X L L L L L Data In Data In Data In Data In
L H X L L H H H Data In High-Z High-Z High-Z
L H X L H L H H High-Z Data In High-Z High-Z
L H X L H H L H High-Z High-Z Data In High-Z
L H X L H H H L High-Z High-Z High-Z Data In
L H H H X X X X High-Z High-Z High-Z High-Z
Mode
Power
Power Down (Isb)
Power Down (Isb)
Read All Bits (Icc)
Read Byte a (Icc)
Bits Only
Read Byte b (Icc)
Bits Only
Read Byte c (Icc)
Bits Only
Read Byte d (Icc)
Bits Only
Write All Bits (Icc)
Write Byte a (Icc)
Bits Only
Write Byte b (Icc)
Bits Only
Write Byte c (Icc)
Bits Only
Write Byte d (Icc)
Bits Only
Selected, (Icc)
Outputs
Disabled
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter
Cin
Input Capacitance
CI/O
Input/Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
Unit
6
pF
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Integrated Silicon Solution, Inc. — www.issi.com
3
Rev.  00B
04/23/08
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