IS62WV12816EALL Datasheet, PDF (13/17 Pages) Integrated Silicon Solution, Inc – Three state outputs

IS62/65WV12816EALL
IS62/65WV12816EBLL
DATA RETENTION CHARACTERISTICS
Symbol Parameter
Test Condition
OPTION
V_DR
V_DD for Data
See Data Retention Waveform
IS62(5)WV12816EALL
Retention
IS62(5)WV12816EBLL
I_DR
Data Retention V_DD= V_DR(min),
Com.
Current
(1) 0V ≤ CS2 ≤ 0.2V, or
(2)
≥ V_DD – 0.2V,
Ind.
CS2 ≥ V_DD - 0.2V
Auto
(3)
and
≥ V_DD -0.2V,
≤ 0.2V, CS2 ≥ V_DD - 0.2V
t_SDR
Data Retention See Data Retention Waveform
Setup Time
t_RDR
Recovery Time See Data Retention Waveform
Note:
1. If
>VDD–0.2V, all other inputs including CS2 and and must meet this condition.
2. Typical values are measured at VDD=VDR(min), TA = 25℃ and not 100% tested.
Min. Typ.⁽²⁾ Max. Unit
1.5
-
V
1.5
-
V
-
2
5 uA
-
-
12
-
-
25
0
-
tRC -
- ns
- ns
DATA RETENTION WAVEFORM (
CONTROLLED)
t_SDR
DATA RETENTION MODE
t_RDR
V_DD
V_DR
GND
> V_DD-0.2V
DATA RETENTION WAVEFORM (CS2 CONTROLLED)
V_DD
CS2
V_DR
GND
DATA RETENTION MODE
t_SDR
t_RDR
CS2 < 0.2V
Integrated Silicon Solution, Inc.- www.issi.com
13
Rev. 0B
12/9/2014