IS61NLP25672 Datasheet, PDF (12/35 Pages) Integrated Silicon Solution, Inc – 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM

IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
ILO
Output Leakage Current
Test Conditions
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
VSS ≤ VIN ≤ VDD⁽¹⁾
VSS ≤ VOUT ≤ VDDQ, OE = VIH
3.3V
Min.
Max.
2.4
—
—
0.4
2.0 VDD + 0.3
–0.3
0.8
–5
5
–5
5
ISSI ^®
2.5V
Min.
Max.
Unit
2.0
—
V
—
0.4
V
1.7 VDD + 0.3
V
–0.3
0.7
V
–5
5
µA
–5
5
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-250
-200
MAX
MAX
Temp.range x18
x36
x72
x18
x36
x72
Unit
ICC
AC Operating
Device Selected,
Com. 450 450 600 425 425 550 mA
Supply Current
OE = VIH, ZZ ≤ VIL,
Ind. 500 500 650 475 475 600
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
ISB
Standby Current Device Deselected,
TTL Input
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com. 150 150 150 150 150 150 mA
Ind. 150 150 150 150 150 150
ISBI
Standby Current Device Deselected,
Com. 110 110 110 110 110 110 mA
CMOS Input
VDD = Max.,
Ind. 125 125 125 125 125 125
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V
f=0
ISB2
Sleep Mode
ZZ>VIH
Com. 60
60
60
60
60
60
mA
Ind. 75
75
75
75
75
75
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. G
07/10/06