IS62C25616BL Datasheet, PDF (11/13 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH-SPEED CMOS STATIC RAM

IS62C25616BL, IS65C25616BL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Vdr Vdd for Data Retention
Idr Data Retention Current
See Data Retention Waveform
Vdd = 2.0V, CE ≥ Vdd – 0.2V
Vin ≥ Vdd – 0.2V, or Vin ≤ Vss + 0.2V
Com.
Ind.
Auto.
typ. ⁽¹⁾
tsdr Data Retention Setup Time See Data Retention Waveform
trdr Recovery Time
See Data Retention Waveform
Note:
1. Typical Values are measured at Vdd = 5V, Ta = 25^oC and not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
4.5V
t_SDR
Data Retention Mode
V_DR
CE
GND
CE ≥ VDD - 0.2V
Min.
2.0
—
—
—
2
0
trc
Max. Unit
5.5 V
10 mA
15
35
— ns
— ns
t_RDR
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev.  A
06/28/2011