IS61VPS25672A Datasheet, PDF (11/35 Pages) Integrated Silicon Solution, Inc – 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A,IS61VPS102418A,IS61LPS102418A
TRUTH TABLE^(1-8) (3CE option)
OPERATION
ADDRESS CE CE2 CE2 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Deselect Cycle, Power-Down None H
X
X
L
X
L
X
X
X L-H High-Z
Deselect Cycle, Power-Down None L
X
L
L
L
X
X
X
X L-H High-Z
Deselect Cycle, Power-Down None L
H
X
L
L
X
X
X
X L-H High-Z
Deselect Cycle, Power-Down None L
X
L
L
H
L
X
X
X L-H High-Z
Deselect Cycle, Power-Down None L
H
X
L
H
L
X
X
X L-H High-Z
Snooze Mode, Power-Down
None X X X H X X X X X X
High-Z
Read Cycle, Begin Burst
External L
L
H
L
L
X
X
X
L L-H
Q
Read Cycle, Begin Burst
External L
L
H
L
L
X
X
X
H L-H High-Z
Write Cycle, Begin Burst
External L
L
H
L
H
L
X
L
X L-H
D
Read Cycle, Begin Burst
External L
L
H
L
H
L
X
H
L L-H
Q
Read Cycle, Begin Burst
External L
L
H
L
H
L
X
H
H L-H High-Z
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L L-H
Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H L-H High-Z
Read Cycle, Continue Burst
Next H
X
X
L
X
H
L
H
L L-H
Q
Read Cycle, Continue Burst
Next H
X
X
L
X
H
L
H
H L-H High-Z
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X L-H
D
Write Cycle, Continue Burst
Next H
X
X
L
X
H
L
L
X L-H
D
Read Cycle, Suspend Burst
Current X
X
X
L
H
H
H
H
L L-H
Q
Read Cycle, Suspend Burst
Current X
X
X
L
H
H
H
H
H L-H High-Z
Read Cycle, Suspend Burst
Current H
X
X
L
X
H
H
H
L L-H
Q
Read Cycle, Suspend Burst
Current H
X
X
L
X
H
H
H
H L-H High-Z
Write Cycle, Suspend Burst
Current X X
X
L
HHH
L
X L-H
D
Write Cycle, Suspend Burst
Current H X
X
L
XHH
L
X L-H
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For WRITE, L means one or more byte write enable signals (BWa-h) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc. BWd enables WRITEs to DQd’s and DQPd. BWe enables WRITEs to DQe’s and DQPe. BWf enables WRITEs to DQf’s
and DQPf. BWg enables WRITEs to DQg’s and DQPg. BWh enables WRITEs to DQh’s and DQPh. DQPa-DQPh are avail-
able on the x72 version. DQPa and DQPb are available on the x18 version. DQPa-DQPd are available on the x36 version.
4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during the
input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
Integrated Silicon Solution, Inc. — 1-800-379-4774
11
Rev. N
02/12/2010