2SC4226 Datasheet, PDF (7/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 3 V, IC = 3 mA, ZO = 50Ω
Freque.
S₁₁
MHz
MAG
ANG
100
0.899
–30.6
200
0.808
–60.6
300
0.723
–86.7
400
0.660
–108.2
500
0.610
–125.9
600
0.583
–138.6
700
0.560
–150.0
800
0.547
–159.4
900
0.538
–167.4
1000
0.535
–174.4
1100
0.534
179.3
1200
0.533
173.4
1300
0.533
168.3
1400
0.534
163.2
1500
0.538
158.7
1600
0.542
154.3
1700
0.545
150.0
1800
0.548
146.1
1900
0.552
142.0
2000
0.556
138.3
S₂₁
MAG
ANG
5.578
153.7
5.327
134.4
4.877
119.6
4.341
108.1
3.883
98.5
3.388
90.9
3.046
84.3
2.741
78.5
2.498
73.4
2.287
68.9
2.111
64.6
1.965
60.2
1.830
56.3
1.721
52.7
1.620
49.2
1.544
45.7
1.464
42.7
1.396
39.5
1.336
36.6
1.280
33.6
isc RF Product Specification
2SC4226
S₁₂
MAG
ANG
0.042
69.0
0.069
54.5
0.084
46.0
0.093
41.1
0.098
38.8
0.102
37.4
0.106
37.8
0.108
38.1
0.112
39.5
0.116
41.0
0.120
43.0
0.125
45.1
0.131
46.7
0.139
48.3
0.146
49.8
0.155
51.3
0.164
52.4
0.174
53.0
0.187
53.7
0.199
54.1
S₂₂
MAG
ANG
0.923
–17.3
0.793
–29.2
0.679
–35.4
0.604
–39.5
0.550
–42.0
0.513
–44.2
0.487
–45.9
0.468
–47.9
0.455
–49.9
0.444
–52.3
0.435
–54.7
0.429
–57.2
0.424
–59.9
0.422
–62.8
0.417
–65.7
0.414
–68.8
0.415
–72.0
0.412
–75.3
0.411
–78.8
0.411
–82.3
isc website：www.iscsemi.cn
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