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| 2SC4226 Datasheet, PDF (2/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4226
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 7mA ; VCE= 3V
fT
Current-GainâBandwidth Product IC= 7mA ; VCE= 3V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 3V;f= 1.0MHz
IC= 7mA ; VCE= 3V;f= 1.0GHz
IC= 7mA ; VCE= 3V;f= 1.0GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
40
250
3.0 4.5
GHz
0.7 1.5 pF
7
9
dB
1.2 2.5 dB
 hFE Classification
Class
R23
R24
R25
Marking R23
R24
R25
hFE
40-80 70-140 125-250
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